Memory device and method of manufacturing the same

ABSTRACT

A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least one kind of element selected from Cu, Ag, Zn, Al and Zr and at least one kind of element selected from Te, S and Se; an insulation layer that isolates the memory layer and the ion source layer for each memory cell; and a diffusion preventing barrier that is provided at a periphery of the memory layer and the ion source layer of each memory cell to prevent the diffusion of the element.

RELATED APPLICATION DATA

This application is a division of U.S. patent application Ser. No.13/048,500 filed Mar. 15, 2011, the entirety of which is incorporatedherein by reference to the extent permitted bylaw. The presentapplication claims the benefit of priority to Japanese PatentApplication No. JP 2010-079695 filed on Mar. 30, 2010 in the JapanPatent Office, the entirety of which is incorporated by reference hereinto the extent permitted by law.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a memory device as aresistance-variable nonvolatile memory device, and a method ofmanufacturing the same.

2. Description of the Related Art

A resistance-variable nonvolatile memory device has been suggested inthe related art.

As a kind of the resistance-variable nonvolatile memory device, there isdisclosed a memory device including a configuration in which a memorylayer that stores information by a variation of a resistance value, andan ion source layer that contains an element capable of moving as an ionare laminated (see Aratani et al., “A Novel Resistance Memory with HighScalability and Nanosecond Switching”, IEDM2007).

For example, as shown in FIG. 18 showing a cross-sectional view of thememory device, the memory device is configured by interposing a memorylayer 53 and an ion source layer 54 between a lower electrode 52 that isa first electrode and an upper electrode that is a second electrode.

In addition, in FIG. 18, a reference numeral 51 indicates an underlayerof the lower electrode 52, and a reference numeral 56 indicates aninsulation layer.

The ion source layer 54 contains at least one element selected from Cu,Ag, and Zn and at least one element selected from Te, S, and Se.

The memory layer 53 is made from any one of tantalum oxide, niobiumoxide, aluminum oxide, hafnium oxide and zirconium oxide, or a mixedmaterial thereof (for example, see JP-A-2006-173267).

SUMMARY OF THE INVENTION

The structure shown in FIG. 18 is a structure for describing a principleof an operation of the memory device.

In an actual device, especially when the miniaturization of the devicesize is progressed, an ion source layer 53 and a memory layer 54 arenecessary to be isolated for each memory cell, as shown in FIG. 19.

In addition, in FIG. 19, a reference numeral 51 indicates an underlayerof a lower electrode 52, and reference numeral 56 indicates a layer(insulation layer or the like) covering an upper electrode 55. Inaddition, a reference numeral 57 indicates an insulation layer thatisolates each memory cell. In addition, in FIG. 19, the ion source layer53 and the memory layer 54 are shown vertically reverse to theconfiguration of FIG. 18.

At this time, an element such as Cu, which is contained in the ionsource layer 53 or the memory layer 54, has a large expansioncoefficient in metals and insulation films, and diffuses between memorycells or between interconnections during an operation of the device.This may be a cause of inhibiting the operation as a stable memorydevice.

In addition, this problem may be more considerable as miniaturization inthe size of the memory device takes place in the future.

The invention addresses the above-identified and other problemsassociated with conventional method and apparatus and it is desirable toprovide a memory device and a manufacturing method of the same that canstably operate even when the device is made to be miniaturized.

According to an embodiment of the invention, there is provided a memorydevice including a memory layer that is isolated for each memory celland stores information by a variation of a resistance value. Inaddition, the memory device includes an ion source layer that is formedto be isolated for each memory cell and to be laminated on the memorylayer, and contains at least one kind of element selected from Cu, Ag,Zn, Al and Zr and at least one kind of element selected from Te, S andSe. In addition, the memory device includes an insulation layer thatisolates the memory layer and the ion source layer for each memory cell,and a diffusion preventing barrier that is provided at a periphery ofthe memory layer and the ion source layer of each memory cell to preventthe diffusion of the element.

According to the memory device of this embodiment of the invention, thediffusion preventing barrier is provided at a periphery of the memorylayer and the ion source layer of each memory cell.

Therefore, it is possible to suppress or prevent the diffusion of anelement such as Cu contained in the laminated structure of the memorylayer and the ion source layer, which has a high diffusion coefficientby the diffusion preventing barrier.

According to another embodiment of the invention, there is provided amethod of manufacturing a memory device. The method includes a step offorming an insulation layer on the lower electrode and opening a holereaching the lower electrode in the insulation layer.

In addition, the method includes a step of forming, on a surface, anitride film or oxide film of a metal element selected from Ti, Ta, Ru,Mn, Al, Co and W or an alloy of these metal elements, which is thinnerthan a depth of the hole and a step of removing the nitride film oroxide film in a lower portion of the hole to expose the lower electrode.

In addition, the method includes a step of forming a first film thatcomes into contact with the lower electrode, is thinner than the depthof the hole and serves as the memory layer.

In addition, the method includes a step of forming, on the first film, asecond film that is buried in the hole and serves as an ion source layercontaining at least one kind of element selected from Cu, Ag, Zn, Al andZr, and at least one kind of element selected from Te, S and Se.

In addition, the method includes a step of planarizing a surface toremove a portion of each of the nitride film or oxide film, the firstfilm and the second film, which is located on the insulation layer, witha portion in the hole being made to remain, and to forma diffusionpreventing barrier film that is made from the nitride film or oxide filmand prevents the diffusion of the element, a memory layer made from thefirst film, and an ion source layer made of the second film.

In addition, the method includes a step of forming an upper electrode onthe ion source layer.

According to the method of manufacturing a memory device of thisembodiment of the invention, the memory layer and the ion source layerare formed at an inner side of the hole that is opened in the insulationlayer. Therefore, the memory layer and the ion source layer are formedto be isolated for each memory cell by the insulation layer.

In addition, the nitride film or oxide film that is thinner than thedepth of the hole is formed, the nitride film or oxide film in a lowerportion of the hole is removed, and a portion located on the insulationlayer is removed with a portion in the hole being made to remain, suchthat the diffusion preventing barrier film made from the nitride film oroxide film is formed. Therefore, it is possible to form a diffusionprevention barrier film on a side wall of the hole.

In addition, the first film serving the memory layer and the second filmserving as the ion source layer are formed on the oxide film or nitridefilm, and a portion of each of the first film and the second film, whichis located on the insulation layer, is removed to form the memory layerand the ion source layer with a portion in the hole being made toremain. Therefore, the memory layer and the ion source layer are formedat an inner side of the diffusion preventing barrier film. That is, itis possible to manufacture a memory device of which the diffusionpreventing barrier film is formed at a periphery of the memory layer andthe ion source layer.

According to still another embodiment of the invention, there isprovided a method of manufacturing a memory device. The method includesa step of forming an insulation layer made from an oxide on a lowerelectrode and opening a hole reaching the lower electrode in theinsulation layer.

In addition, the method includes a step of forming a film that comesinto contact with the lower electrode, is thinner than a depth of thehole, and serves as a memory layer containing Mn or Al.

In addition, the method includes a step of forming, on the memory layer,a second film that is buried in the hole and serves as an ion sourcelayer containing at least one kind of element selected from Cu, Ag, Zn,Al and Zr, and at least one kind of element selected from Te, S and Se.

In addition, the method includes a step of diffusing Mn or Al containedin the film serving as the memory layer, through a heat treatment, toform a diffusion preventing barrier film, which is made from an oxidefilm and prevents the diffusion of the element, at an interface with theinsulation layer.

In addition, the method includes a step of planarizing a surface toremove a portion of each of the diffusion preventing barrier film, thefilm serving as the memory layer, and the second film, which is locatedon the insulation layer, with a portion in the hole being made toremain, and to form a memory layer made from the film serving as thememory layer and an ion source layer made from the second film.

In addition, the method includes a step of forming an upper electrode onthe ion source layer.

According to the method of manufacturing a memory device of thisembodiment of the invention, the memory layer and the ion source layerare formed at an inner side of the hole that is opened in the insulationlayer. Therefore, the memory layer and the ion source layer are formedto be separated for each memory cell by the insulation layer.

In addition, the film that is thinner than the depth of the hole andserves as the memory layer containing Mn or Al is formed, and the secondfilm that is buried in the hole and serves as the ion source layer isformed. Then, Mn or Al contained in the film serving as the memory layerdiffuses through the heat treatment to form the oxide film at theinterface with the insulation layer. In addition, a portion of the oxidefilm, which is located on the insulation layer, is removed with aportion in the hole being made to remain, to form the diffusionpreventing barrier film made from the oxide film. Therefore, it ispossible to form the diffusion preventing barrier film on the side wallof the hole.

In addition, a portion of each of the film serving as the memory layerand the second film, which is located on the insulation layer, isremoved with a portion in the hole being made to remain, to form thememory layer and the ion source layer. Therefore, the memory layer andthe ion source layer are formed at an inner side of the diffusionpreventing barrier film. That is, it is possible to manufacture a memorydevice of which a diffusion preventing barrier film is formed at theperiphery of the memory layer and the ion source layer.

According to yet another embodiment of the invention, there is provideda method of manufacturing a memory device. The method includes a step offorming a diffusion preventing barrier layer, which is made from aninsulation layer and prevents the diffusion of an element, on a lowerelectrode, and opening a hole reaching the lower electrode in thediffusion preventing barrier layer.

In addition, the method includes a step of forming a first film thatcomes into contact with the lower electrode, is thinner than a depth ofthe hole and serves as a memory layer.

In addition, the method includes a step of forming, on the first film, asecond film that is buried in the hole and serves as an ion source layercontaining at least one kind of element selected from Cu, Ag, Zn, Al andZr, and at least one kind of element selected from Te, S and Se.

In addition, the method includes a step of planarizing a surface toremove a portion of each of the first film and the second film, which islocated on the diffusion prevention barrier layer, with a portion in thehole being made to remain, and to form a memory layer made from thefirst film and an ion source layer made from the second film.

In addition, the method includes a step of forming an upper electrode onthe ion source layer.

According to the method of manufacturing a memory device of thisembodiment of the invention, the first film serving as the memory layerand the second film serving as the ion source layer are formed, and aportion of each of the first and second films, which is located on thediffusion preventing barrier layer, is removed with a portion in thehole being made to remain, to form the memory layer and the ion sourcelayer. Therefore, the memory layer and the ion source layer are formedat an inner side of the diffusion preventing barrier layer. That is, itis possible to manufacture a memory device of which the diffusionpreventing barrier film is formed at a periphery of the memory layer andthe ion source layer.

In addition, the memory layer and the ion source layer are formed at aninner side of the hole that is opened in the diffusion preventingbarrier layer made of the insulation layer. Therefore, the memory layerand the ion source layer are formed to be separated for each memory cellby the diffusion preventing barrier layer.

According to still yet another embodiment of the invention, there isprovided a method of manufacturing a memory device. The method includesa step of forming sequentially, on a lower electrode, each layer of amemory layer, an ion source layer containing at least one kind ofelement selected from Cu, Ag, Zn, Al and Zr, and at least one kind ofelement selected from Te, S and Se, and an upper electrode.

In addition, the method includes a step of patterning the memory layer,the ion source layer and the upper electrode with a pattern for eachmemory cell and a step of forming a diffusion preventing barrier layerthat is made from an insulation layer and that prevents the diffusion ofthe element, by entirely covering the memory layer, the ion sourcelayer, and the upper electrode.

In addition, the method includes a step of forming an opening reachingthe upper electrode in the diffusion preventing barrier layer.

According to the method of manufacturing a memory device of thisembodiment of the invention, the memory layer, the ion source layer, andthe upper electrode are patterned with a pattern for each memory celland the diffusion preventing barrier layer made from the insulationlayer is formed by entirely covering the memory layer, the ion sourcelayer, and the upper electrode.

Therefore, it is possible to manufacture a memory device of which thediffusion preventing barrier layer is formed at a periphery of thememory layer and the ion source layer.

In addition, because the memory layer and the ion source layer arecovered with the diffusion preventing barrier layer after beingpatterned with a pattern for each memory cell, the diffusion preventingbarrier layer is formed between adjacent memory cells. Therefore, thememory layer and the ion source layer are formed to be separated foreach memory cell by the diffusion preventing barrier layer.

According to the above-described embodiments of the invention, it ispossible to suppress or prevent the diffusion of an element such as Cucontained in the structure configured by laminating the memory layer andthe ion source layer, which has a high diffusion coefficient. Therefore,it is possible to suppress or prevent the element from diffusing into anadjacent memory cell or between the memory cells.

Therefore, according to the embodiments of the invention, it is possibleto suppress the variation in characteristics of the memory device suchas a write-in voltage, a read-out voltage, and the resistance torepetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration view (cross-sectional view) of afirst type memory device according to an embodiment of the invention;

FIG. 2 is a schematic configuration view (cross-sectional view) of asecond type memory device according to an embodiment of the invention;

FIG. 3 is a schematic configuration view (cross-sectional view) of amemory device according to a first embodiment of the invention;

FIGS. 4A to 4C are manufacturing process views illustrating a method ofmanufacturing the memory device of FIG. 3;

FIGS. 5D to 5F are manufacturing process views illustrating a method ofmanufacturing the memory device of FIG. 3;

FIGS. 6G to 6I are manufacturing process views illustrating a method ofmanufacturing the memory device of FIG. 3;

FIGS. 7J and 7K are manufacturing process views illustrating a method ofmanufacturing the memory device of FIG. 3;

FIG. 8 is a schematic configuration view (cross-sectional view) of amemory device according to a second embodiment of the invention;

FIGS. 9F to 9H are manufacturing process views illustrating a method ofmanufacturing the memory device of FIG. 8;

FIGS. 10I and 10J are manufacturing process views illustrating a methodof manufacturing the memory device of FIG. 8;

FIG. 11 is a schematic configuration view (cross-sectional view) of amemory device according to a third embodiment of the invention;

FIGS. 12A to 12C are manufacturing process views illustrating a methodof manufacturing the memory device of FIG. 11;

FIGS. 13D to 13F are manufacturing process views illustrating a methodof manufacturing the memory device of FIG. 11;

FIGS. 14G to 14I are manufacturing process views illustrating a methodof manufacturing the memory device of FIG. 11;

FIG. 15 is a schematic configuration view (cross-sectional view) of amemory device according to a fourth embodiment of the invention;

FIGS. 16D to 16F are manufacturing process views illustrating a methodof manufacturing the memory device of FIG. 15;

FIGS. 17G to 17I are manufacturing process views illustrating a methodof manufacturing the memory device of FIG. 15;

FIG. 18 is a cross-sectional view of a memory device suggested in therelated art; and

FIG. 19 is a cross-sectional view illustrating a configuration where thememory device of FIG. 18 is isolated for each memory cell.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, preferred modes for carrying out the invention(hereinafter, referred to as “embodiments”) will be described.

Description will be made in the following order.

1. Outline of the invention

2. A first embodiment

3. A second embodiment

4. A third embodiment

5. A fourth embodiment

1. Outline of the Invention

First, an outline of the invention will be described prior to thedescription of specific embodiments of the invention.

In the embodiment of the invention, a memory device, which is a kind ofa resistance-variable nonvolatile memory device described above, adoptsa configuration in which a memory layer storing information according toa variation of a resistance and an ion source layer containing anelement that can move as an ion are laminated.

In the embodiment of the invention, the memory layer and the ion sourcelayer are isolated for each memory cell for allowing the miniaturizationof the memory device.

As a material of the memory layer of which a resistance value is varied,an oxide of a metal element such as Ta, Nb, Al, Hf, Zr, Ni, Co and Cemay be used.

The ion source layer containing elements that can move as ions isconfigured to contain at least one kind of element selected from Cu, Ag,Zn, Al and Zr and at least one kind of element selected from Te, S andSe.

The memory layer and the ion source layer are configured using theabove-described material, such that at least one kind of elementselected from Cu, Ag, Zn, Al and Zr contained in the ion source layercan move as an ion.

The memory device according to the embodiment of the invention isconfigured as described above, such that it operates as described belowand can store information.

First, at a state where a resistance value of the memory layer is high,when a voltage is applied to the memory layer and the ion source layerso that the ion source layer side of the memory device becomes apositive electric potential, an element that is contained in the ionsource layer and can move as an ion is ionized and diffuses into theinside of the memory layer. The diffused ion remains inside the memorylayer or is bonded with an electron at a portion of an electrodeconnected to the memory layer side to be precipitated, such that aconduction path is formed at an inner side of the memory layer andthereby a resistance value of the memory layer becomes lowered.

In addition, at a state where the resistance value of the memory layerbecomes lowered, when a voltage is applied so that the ion source layerside becomes a negative electric potential, the element that diffused inthe memory layer is again ionized to return into the ion source layerand thereby a resistance value of the memory layer becomes high.

As described above, since the resistance value of the memory layervaries and a state of the varied resistance value is maintained, it ispossible to store information according to a resistance value of thememory layer.

Each layer besides the memory layer has a resistance value sufficientlylower than that of the memory layer. Therefore, the resistance value ofa memory cell varies in connection with the resistance value of thememory layer, such that it is possible to readout information stored inthe memory cell by detecting the resistance value of the memory cell.

In addition, in the embodiment of the invention, a diffusion preventingbarrier is provided at a periphery of the memory layer and the ionsource layer of the memory cell so as to prevent the diffusion of the Cuor the like described above.

Specifically, two types of memory device are configured as describedbelow.

In a first type of memory device according to an embodiment of theinvention, a relatively thin diffusion preventing barrier is formedbetween side walls of the memory layer and the ion source layer of eachmemory cell and an insulation layer isolating each memory cell.

As a material of this type of diffusion preventing barrier, an oxide ornitride of a metal such as Ti, Ta, Ru, Mn, Al, Co and W and an alloy ofthese metals, amorphous SiN, amorphous SiCN, or the like may be used.

FIG. 1 shows a schematic configuration view (cross-sectional view) of afirst type memory device according to an embodiment of the invention.

A memory device shown in FIG. 1 has a configuration corresponding tothat of the memory device shown in FIG. 19.

A lower electrode 12, a memory layer 13, and an ion source layer 14,which are isolated for each memory cell by an interlayer insulationlayer 17, are formed on an underlayer 11. A common upper electrode 15 isformed on the ion source layer 14.

A diffusion preventing barrier film. 18 is formed between side walls ofthe memory layer 13 and the ion source layer 14 of each memory cell andthe interlayer insulation layer 17 isolating each memory cell.

In addition, a reference numeral 16 of FIG. 1 indicates a layer(insulation layer or the like) that covers the upper electrode 15. Inaddition, as the underlayer 11, a conduction layer such as asemiconductor substrate, a wiring and a plug layer, and an insulationlayer insulating and isolating the conduction layer are included.

In the first type of memory device according to the embodiment of theinvention, as shown in FIG. 1, the diffusion preventing barrier film 18is formed between a side wall of the memory layer 13 and the ion sourcelayer 14 of each memory cell and the interlayer insulation layer 17isolating each memory cell. Therefore, it is possible to suppress orprevent the diffusion of an element such as Cu contained in the memorylayer 13 or the ion source layer 14, which has a high diffusioncoefficient by the diffusion preventing barrier film 18. That is, it ispossible to suppress or prevent the element from diffusing into anadjacent memory cell or the interlayer insulation layer 17 between thememory cells.

Therefore, it is possible to suppress the variation in characteristicsof the memory device such as a write-in voltage, a read-out voltage, andthe resistance to repetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

A second type of memory device uses an insulation layer isolating eachmemory cell as the diffusion preventing barrier.

As a material of the diffusion preventing barrier, a nitrogen-containingresin material, amorphous SiN, amorphous SiCN, or the like may be used.

FIG. 2 shows a schematic configuration view (cross-sectional view) ofthe second type of memory device according to an embodiment of theinvention.

The memory device shown in FIG. 2 has a configuration corresponding tothat of the memory device shown in FIG. 19.

A lower electrode 12, a memory layer 13 and an ion source layer 14,which are isolated for each memory cell by an insulation layer, areformed on an underlayer 11. A common upper electrode 15 is formed on theion source layer 14. A reference numeral 16 of FIG. 2 indicates a layer(insulation layer or the like) that covers the upper electrode 15.

As the insulation layer isolating each memory cell, a diffusionpreventing barrier layer 19 is formed.

In the second type of memory device according to the embodiment of theinvention, as shown in FIG. 2, the diffusion preventing barrier layer 19is formed as an insulation layer isolating each memory cell, such thatit is possible to suppress or prevent the diffusion of an element suchas Cu contained in the memory layer 13 or the ion source layer 14, whichhas a high diffusion coefficient.

Therefore, it is possible to suppress the variation in characteristicsof the memory device such as a write-in voltage, a read-out voltage, andthe resistance to repetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

2. A First Embodiment

Next, specific embodiments of a memory device of the invention will bedescribed.

FIG. 3 shows a schematic configuration view (cross-sectional view) of amemory device according to a first embodiment of the invention.

This embodiment is a specific embodiment of the first type of memorydevice shown in FIG. 1.

In addition, FIG. 3 shows a cross-sectional view of one memory cell, butthe memory device is actually configured by a plurality of memory cells.

In the memory device of the first embodiment, as shown in FIG. 3, alower electrode 12, a memory layer 13, and an ion source layer 14 of amemory cell are formed in this order on a polysilicon plug layer 22 thatis formed to be buried in an insulation layer 21 such as a silicon oxidelayer. An upper electrode 15 is formed on these components in commonwith an adjacent memory cell. In FIG. 3, a reference number 16 indicatesa layer (insulation layer or the like) that covers the upper electrode15. An insulation layer 21 and a polysilicon plug layer 22 correspond tothe underlayer 11 formed under the lower electrode 12 in FIG. 1. Thepolysilicon plug layer 22 connects to a transistor or the like (notshown) that are formed under thereof to select the memory cell.

An adjacent memory cell is isolated by an interlayer insulation layer17.

The lower electrode 12 is formed in a manner that a portion of an uppersurface thereof is formed in a concave shape. This concave portion isformed at the time of etching in a manufacturing method to be describedbelow. In addition, the upper surface of the lower electrode 12 isformed to have a pattern wider than the memory layer 13. As describedabove, the upper surface is formed to have a pattern wider than thememory layer 13, such that even when alignment deviation between thelower electrode 12 and the memory layer 13 may occur, the entirety ofthe lower surface of the memory layer 13 can be allowed to come intocontact with the lower electrode 12.

The memory layer 13 is formed to bury the concave portion in the uppersurface of the lower electrode 12 and to have a U-shaped cross section.

The ion layer 14 is formed on the memory layer 13 and inside the memorylayer 13 having the U-shaped cross section.

As a material of the lower electrode 12 and the upper electrode 15, W,WN, Ti, TiN, or the like may be used. In addition, other electrodematerial used as a semiconductor material may be used.

As a material of the memory layer 13, an oxide of a metal element suchas Ta, Nb, Al, Hf, Zr, Ni, Co, and Ce may be used.

As a material of the ion source layer 14, a material including at leastone kind of element selected from Cu, Ag, Zn, Al, and Zr and at leastone kind of element selected from Te, S, and Se may be used. Forexample, CuTe, AlTe, or the like may be used.

In this embodiment, especially, a diffusion preventing barrier film 18is formed between a side wall of the memory layer 13 and an interlayerinsulation layer 17 isolating each memory cell.

As a material of the diffusion preventing barrier film 18, an oxide ornitride of a metal such as Ti, Ta, Ru, Mn, Al, Co, and W and an alloy ofthese metals, amorphous SiN, amorphous SiCN, or the like may be used.

Therefore, it is possible to suppress or prevent the diffusion of anelement such as Cu contained in the memory layer 13 or the ion sourcelayer 14, which has a high diffusion coefficient.

The memory device of this embodiment can be manufactured, for example,as described below.

First, as shown in FIG. 4A, in the insulation layer 21 such as a siliconoxide layer, the polysilicon plug layer 22 connected to a transistor(not shown) is formed to be buried therein.

Then, as shown in FIG. 4B, the upper portion of the polysilicon pluglayer 22 is made to be recessed further than the neighboring insulationlayer 21 through dry etching. CxFy (x=1 to 6, y=1 to 8), O₂, or a raregas is used for the dry etching, and a general magnetron type etchingdevice is used as an etching device.

Next, a metal film made of W, WN, Ti, TiN, or the like is buried in anopening of the polysilicon plug layer 22 by an RF sputtering process.

In addition, a metal film remaining on the insulation layer 21 isremoved by using a CMP (Chemical Mechanical Polishing) method or dryetching, and then as shown in FIG. 4C, the lower electrode 12 made of ametal film is formed on the polysilicon plug layer 22.

Next, an interlayer insulation layer having a thickness of 20 to 300 nmis formed by entirely covering the insulation layer 21 and thepolysilicon plug layer 22. As a material of the interlayer insulationlayer, for example, SiO₂ or SiN is used. In addition, as a method offorming the interlayer insulation layer, either a plasma CVD (ChemicalVapor Deposition) method or a spin coat method may be used. By doing so,the interlayer insulation layer is formed on the lower electrode 12.

In addition, as shown in FIG. 5D, a resist mask 23 is formed on theinterlayer insulation layer 17. A hole reaching the lower electrode 12is formed to be opened in the interlayer insulation layer 17 bylithography and a dry etching using the resist mask 23.

These processes may use a method used in a method of manufacturing asemiconductor in the related art.

As the lithography, a KrF exposure device, an ArF exposure device, or aliquid immersion ArF exposure device is used for patterning the resistmask 23. In addition, for the dry etching, CxFy (x=1 to 6, y=1 to 8),O₂, or a rare gas is used as an etching gas, and a general magnetrontype etching device is used as an etching device.

After the interlayer insulation layer 17 is etched, for example, theresist mask 23 and a remaining attached material generated at the timeof the etching process are completely removed by an ashing process usingoxygen plasma as a base or an organic amine-series chemical process asshown in FIG. 5E.

Next, as shown in FIG. 5F, a nitride film or oxide film 24, which isthinner than a depth of the hole and serves as the diffusion preventingbarrier film 18, is formed on the surfaces of the interlayer insulationlayer 17 and the lower electrode 12 by an RF sputtering process.Specifically, for example, under an Ar/N₂ atmosphere or Ar/O₂atmosphere, as the nitride film or oxide film 24, a nitride or oxide ofTi, Ta, Ru, Mn, Al, Co and W is formed in a thickness of 5 to 50 nm.

In addition, by an inverse-sputtering method (method of emitting a raregas ion onto a substrate surface by the application of an RF to thesubstrate and physically removing impurities on the surface), thenitride film or oxide film 24 (metal nitride or metal oxide) is removed,such that the bottom surface of the hole is made as shown in FIG. 6G. Atthis time, the lower electrode 12 is exposed, and a portion of the lowerelectrode 12, which is exposed to the opening of the metal film, iscut-off, such that a concave portion is formed.

Next, as shown in FIG. 6H, a first film 25, that is, a tantalum oxidefilm, a niobium oxide film or the like, which comes into contact withthe lower electrode 12, is thinner than a depth of the hole and servesas the memory layer 13, is formed in a thickness of 1 to 50 nm, by thesame RF sputtering process.

Therefore, the concave portion of the lower electrode 12 is buried bythe first film 25 serving as the memory layer 13, and the first film 25is formed on the lower portion and the side wall of the hole.

Subsequently, as shown in FIG. 6I, a second film 26, that is, a CuTefilm or the like, a portion of which is buried in the hole and serves asthe ion source layer 14, is formed on the first film 25 in a thicknessof 5 to 300 nm by the RF sputtering process.

Next, the surface of the second film 26 is planarized by a CMP method,and thereby a portions of the nitride film or oxide film 24, the firstfilm 25 and the second film 26, which are located on the interlayerinsulation layer 17, are removed with portions within the hole beingmade to remain. Therefore, as shown in FIG. 7J, the diffusion preventingbarrier film 18 made from a remainder portion of the nitride film oroxide film 24, the memory layer 13 made of a remainder portion of thefirst film 25, and the ion source layer 14 made of a remainder portionof the second film 26 that remain in the hole.

Then, as shown in FIG. 7K, the upper electrode 15 is formed on thesurfaces of the ion source layer 14, the memory layer 13, the diffusionpreventing barrier film 18, and the interlayer insulation film 17 by anRF sputtering process. Therefore, the upper electrode 15 is formed toconnect to the surface of the ion source layer 14.

In addition, the layer 16 (insulation layer or the like) covering theupper electrode 15 is formed, such that it is possible to manufacturethe memory device shown in FIG. 3.

In addition, even when amorphous SiN or amorphous SiCN is used insteadof the metal nitride or metal oxide as the diffusion preventing barrierfilm 18, the diffusion preventing barrier film 18 may be formed by thesame process as described above.

Specifically, the amorphous SiN or the amorphous SiCN may be formed by aplasma CVD method, and the amorphous SiN or the amorphous SiCN in alower portion of the hole may be removed by the etching gas and theetching device described above.

According to the configuration of the memory device of theabove-described embodiment, the diffusion preventing barrier film 18 isformed between a side wall of the memory layer 13 and the interlayerinsulation layer 17 isolating each memory cell. Therefore, it ispossible to suppress or prevent the diffusion of an element such as Cucontained in the memory layer 13 or the ion source layer 14, which has ahigh diffusion coefficient.

Therefore, according to the configuration of the memory device of thisembodiment, it is possible to suppress the variation in characteristicsof the memory device such as a write-in voltage, a read-out voltage andthe resistance to repetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

3. A Second Embodiment

FIG. 8 shows a schematic configuration view (cross-sectional view) of amemory device according to a second embodiment of the invention.

This embodiment is a specific embodiment of the first type of memorydevice shown in FIG. 1 and a configuration thereof is slightly differentfrom that of the first embodiment shown in FIG. 3.

In addition, FIG. 8 also shows a cross-sectional view of one memory cellsimilar to the FIG. 3 of the first embodiment, but the memory device isactually configured by a number of memory cells.

In the memory device of the second embodiment, as shown in FIG. 8, aconcave portion is not formed on the upper surface of the lowerelectrode 12 and the upper surface of the lower electrode 12 is formedas a flat surface flush with the upper surface of the insulation layer21. A memory layer 13 is formed on the upper surface of the flat lowerelectrode 12.

The other configurations are substantially the same as those of thememory device of the first embodiment shown in FIG. 3.

That is, the diffusion preventing barrier film 18 is formed between theside wall of the memory layer 13 and the interlayer insulation layer 17isolating each memory cell.

Therefore, it is possible to suppress or prevent the diffusion of anelement such as Cu contained in the memory layer 13 or the ion sourcelayer 14, which has a high diffusion coefficient.

In addition, in this embodiment, by adopting manufacturing methoddescribed below, an oxide is used for the interlayer insulation layer17, and the diffusion prevention barrier film 18 is formed from an oxideof a metal such as Mn and Al and an alloy of these metals.

As a material of each of the lower electrode 12, the upper electrode 15,the memory layer 13 and the ion source layer 14, the materials describedas an example in the first embodiment may be used.

The memory device of this embodiment can be manufactured, for example,as described below.

Each of the processes from a process of opening the interlayerinsulation layer 17 to a process of removing the etching mask 23 aresubstantially the same as those of the first embodiment shown in FIG. 4Ato FIG. 5E. Therefore, FIGS. 4A to 5E are adopted and descriptionthereof will be omitted.

In this embodiment, from the same state as that shown in FIG. 5E, asshown in FIG. 9F, a third film 27, which comes into contact with thelower electrode 12, is thinner than the depth of the hole and serves asthe memory layer 13, is formed in a thickness of 1 to 50 nm by an RFsputtering process. Therefore, the third film 27 is formed on the bottomportion and the side wall of the hole.

At this time, an alloy target or a plurality of targets are used, suchthat 1 to 20 atomic % of Mn or Al is mixed in the third film 27 such asa tantalum oxide film and a niobium oxide film. This configuration isdifferent from that of the first film 25 of the first embodiment.

Next, as shown in FIG. 9G, a second film 26 that is buried in the holeand serves as an ion source layer 14, that is, a CuTe film or the like,is formed on the third film 27 in a thickness of 5 to 300 nm by the sameRF sputtering process.

Then, the resultant product is heated by using a heating device such asa hot plate or a furnace under an inert atmosphere at a temperature of250 to 400° C. for 30 minutes. At this time, the Mn or Al, which iscontained in the third film 27 serving as the memory layer 13, diffusesin the third film 27 and reacts with oxygen at an interface with aninterlayer insulation layer 17, such that as shown in FIG. 9H, an oxidefilm 28 having a thickness of 1 to 10 nm is formed.

Next, the surface is planarized by a CMP method, and thereby a portionof each of the oxide film 28, the third film 27, and the second film 26,which is located on the interlayer insulation layer 17, is removed witha portion in the hole being made to remain. Therefore, as shown in FIG.10I, the diffusion preventing barrier film 18 made of the oxide film 28,the memory layer 13 made of the third film 27, and the ion source layer14 made of the second film 26 are formed in the hole.

Then, as shown FIG. 10J, the upper electrode 15 is formed on thesurfaces of the ion source layer 14, the memory layer 13, the diffusionpreventing barrier film 18, and the interlayer insulation film 17 by anRF sputtering process. Therefore, the upper electrode 15 is formed toconnect to the surface of the ion source layer 14.

In addition, the layer 16 (insulation layer or the like) covering theupper electrode 15 is formed, such that it is possible to manufacturethe memory device shown in FIG. 8.

According to the configuration of the memory device of theabove-described embodiment, the diffusion preventing barrier film 18 isformed between a side wall of the memory layer 13 and the interlayerinsulation layer 17 isolating each memory cell. Therefore, it ispossible to suppress or prevent the diffusion of an element such as Cucontained in the memory layer 13 or the ion source layer 14, which has ahigh diffusion coefficient.

Therefore, according to the memory device of this embodiment, it ispossible to suppress the variation in characteristics of the memorydevice such as a write-in voltage, a read-out voltage, and theresistance to repetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

4. A Third Embodiment

FIG. 11 shows a schematic configuration view (cross-sectional view) of amemory device according to a third embodiment of the invention.

This embodiment is a specific embodiment of the second type of memorydevice shown in FIG. 2.

In addition, FIG. 11 also shows a cross-sectional view of one memorycell, but the memory device is actually configured by a number of memorycells.

In the memory device of the third embodiment, as shown in FIG. 11, alower electrode 12, a memory layer 13, and an ion source layer 14 of amemory cell are formed in this order on a polysilicon plug layer 22 thatis formed to be buried in an insulation layer 21 such as a silicon oxidelayer. An upper electrode 15 is formed on these components in commonwith an adjacent memory cell. In FIG. 11, a reference number 16indicates a layer (insulation layer or the like) that covers the upperelectrode 15.

The upper surface of the lower electrode 12 is formed to have a patternwider than the memory layer 13. As described above, the upper surface isformed to have a pattern wider than the memory layer 13, such that evenwhen alignment deviation between the lower electrode 12 and the memorylayer 13 may occur, the entirety of the lower surface of the memorylayer 13 can be allowed to come into contact with the lower electrode12.

The memory layer 13 is formed to have a U-shaped cross section.

The ion source layer 14 is formed on the memory layer 13 and inside thememory layer 13 having the U-shaped cross section.

As a material of each of the lower electrode 12, the upper electrode 15,the memory layer 13, and the ion source layer 14, the materialsdescribed as an example in the first embodiment may be used.

In this embodiment, especially, a diffusion preventing barrier layer 19is formed as an insulation layer isolating each memory cell.

As a material of the diffusion preventing barrier layer 19, anitrogen-containing resin material, amorphous SiN, amorphous SiCN, orthe like may be used.

Therefore, it is possible to suppress or prevent the diffusion of anelement such as Cu contained in the memory layer 13 or the ion sourcelayer 14, which has a high diffusion coefficient.

The memory device of this embodiment can be manufactured, for example,as described below.

First, as shown in FIG. 12A, in the insulation layer 21 such as asilicon oxide layer, the polysilicon plug layer 22 connected to anunderlayer transistor (not shown) is formed to be buried therein.

Then, as shown in FIG. 12B, the upper portion of the polysilicon pluglayer 22 is made to be recessed further than the neighboring insulationlayer 21 through dry etching. CxFy (x=1 to 6, y=1 to 8), O₂, or a raregas is used for the dry etching, and a general magnetron type etchingdevice is used as an etching device.

Next, a metal film made of W, WN, Ti, TiN, or the like is buried in anopening of the polysilicon plug layer 22 by an RF sputtering process.

In addition, a metal film remaining on the insulation layer 21 isremoved by using a CMP (Chemical Mechanical Polishing) method or a dryetching, and then as shown in FIG. 12C, the lower electrode 12 made of ametal film is formed on the polysilicon plug layer 22.

Next, as shown in FIG. 13D, a diffusion preventing barrier layer 19having a thickness of 20 to 300 nm is formed by entirely covering theinsulation layer 21 and the polysilicon plug layer 22. Therefore, thediffusion preventing barrier layer 19 is formed on the lower electrode12. As a material of the diffusion preventing barrier layer 19, a resinmaterial such as BCB (benzocyclobutene) or amorphous SiC or SiCN isused. In addition, as a method of forming the diffusion preventingbarrier layer 19, either a plasma CVD (Chemical Vapor Deposition) methodor a spin coat method may be used.

Subsequently, a hole reaching the lower electrode 12 is formed to beopened in the diffusion preventing barrier layer 19 by a lithography anddry etching.

These processes may use a method used in a method of manufacturing asemiconductor in the related art.

As the lithography, a KrF exposure device, an ArF exposure device, or aliquid immersion ArF exposure device is used for patterning a resistmask. In addition, for the dry etching, CxFy (x=1 to 6, y=1 to 8), O₂,or a rare gas is used as an etching gas, and a general magnetron typeetching device is used as an etching device.

After the diffusion preventing barrier layer 19 is etched, for example,the resist mask and a remaining attached material generated at the timeof the etching process are completely removed by an ashing process usingoxygen plasma as a base or an organic amine-series chemical process.This state is shown in FIG. 13E.

Next, as shown in FIG. 13F, a first film 25, that is, a tantalum oxidefilm, a niobium oxide film or the like, which comes into contact withthe lower electrode 12, is thinner than a depth of the hole and servesas the memory layer 13, is formed in a thickness of 1 to 50 nm, by an RFsputtering process. Therefore, the first film 25 is formed on the lowerportion and the side wall of the hole.

Subsequently, as shown in FIG. 14G, a second film 26, that is, a CuTefilm or the like, which is buried in the hole and serves as the ionsource layer 14, is formed on the first film 25 in a thickness of 5 to300 nm by the RF sputtering process.

Next, the surface of the second film 26 is planarized by a CMP method,and thereby a portion of each of the first film 25 and the second film26, which is located on the diffusion preventing barrier layer 19, isremoved with a portion in the hole being made to remain. Therefore, asshown in FIG. 14H, the memory layer 13 made of the first film 25 and theion source layer 14 made of the second film 26 are formed in the hole.

Then, as shown in FIG. 14I, the upper electrode 15 is formed on thesurfaces of the ion source layer 14, the memory layer 13 and thediffusion preventing barrier layer 19 by an RF sputtering process.Therefore, the upper electrode 15 is formed to connect to the surface ofthe ion source layer 14.

In addition, the layer 16 (insulation layer or the like) covering theupper electrode 15 is formed, such that it is possible to manufacturethe memory device shown in FIG. 11.

According to the configuration of the memory device of theabove-described embodiment, the diffusion preventing barrier layer 19 isformed as an insulation layer isolating each memory cell. Therefore, itis possible to suppress or prevent the diffusion of an element such asCu contained in the memory layer 13 or the ion source layer 14, whichhas a high diffusion coefficient.

Therefore, according to the configuration of the memory device of thisembodiment, it is possible to suppress the variation in characteristicsof the memory device such as a write-in voltage, a read-out voltage andthe resistance to repetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

5. A Fourth Embodiment

FIG. 15 shows a schematic configuration view (cross-sectional view) of amemory device according to a fourth embodiment of the invention.

This embodiment is a specific embodiment of the second type of memorydevice shown in FIG. 2.

In addition, FIG. 15 also shows a cross-sectional view of one memorycell, but the memory device is actually configured by a number of memorycells.

In the memory device of the fourth embodiment, as shown in FIG. 15, alower electrode 12, a memory layer 13, an ion source layer 14, and anupper electrode 15 of a memory cell are formed in this order on apolysilicon plug layer 22 that is formed to be buried in an insulationlayer 21 such as a silicon oxide layer.

The upper surface of the lower electrode 12 is formed to have a patternwider than the memory layer 13. As described above, the upper surface isformed to have a pattern wider than the memory layer 13, such that evenwhen alignment deviation between the lower electrode 12 and the memorylayer 13 may occur, the entirety of the lower surface of the memorylayer 13 can be allowed to come into contact with the lower electrode12.

In addition, the memory layer 13, the ion source layer 14, and the upperelectrode 15 are formed in the same plane pattern.

As a material of each of the lower electrode 12, the upper electrode 15,the memory layer 13, and the ion source layer 14, the materialsdescribed as an example in the first embodiment may be used.

In this embodiment, especially, a diffusion preventing barrier layer 19is formed as an insulation layer isolating each memory cell.

As a material of the diffusion preventing barrier layer 19, anitrogen-containing resin material, amorphous SiN, amorphous SiCN, orthe like may be used.

Therefore, it is possible to suppress or prevent the diffusion of anelement such as Cu contained in the memory layer 13 or the ion sourcelayer 14, which has a high diffusion coefficient.

The memory device of this embodiment can be manufactured, for example,as described below.

Each of the processes to the process of forming the lower electrode 12is substantially the same as the manufacturing method of the thirdembodiment shown in FIGS. 12A to 12C. Therefore, FIGS. 12A to 12C areadopted and description thereof will be omitted.

In this embodiment, from the same state as that shown in FIG. 12C, asshown in FIG. 16D, the memory layer 13, the ion source layer 14, and theupper electrode 15 are sequentially formed to have a thickness of 1 to50 nm, 5 to 100 nm and 20 to 100 nm, respectively, by an RF sputteringprocess.

Next, a SiO₂ film 30 serving as a hard mask for processing a metal layerof the upper electrode 15 is formed in a thickness of 10 to 200 nm byusing a plasma CVD method.

Then, resist patterning is performed by using an ArF exposure device oran KrF exposure device to form a resist mask 31 on the SiO₂ film 30, asshown in FIG. 12E.

Next, as shown in FIG. 16F, each layer from the upper electrode 15 tothe memory layer 13 is patterned in a pattern for each memory cell byusing an ion milling or dry etching. At this time, Ar ion is used in thecase of the ion milling, and a chlorine-based gas, or a chlorine-basedgas and a rare gas are used in the case of the dry etching.

Next, as shown in FIG. 17G, the diffusion preventing barrier layer 19,which is made of an insulation layer and prevents the diffusion of theelement, is formed in a thickness of 20 to 300 nm by entirely coveringthe memory layer 13, the ion source layer 14, and the upper electrode15.

As a material of the diffusion preventing barrier layer 19, anitrogen-containing resin material such as BCB (benzocyclobutene) oramorphous SiC or SiCN is used. In addition, as a method of forming thediffusion preventing barrier layer 19, either a plasma CVD (ChemicalVapor Deposition) method or a spin coat method may be used.

Next, as shown in FIG. 17H, a surface of the diffusion preventingbarrier layer 19 is planarized by using a CMP method.

In addition, as shown in FIG. 17I, an opening reaching the upperelectrode 15 is formed in the diffusion preventing barrier layer 19 byusing lithography and a dry etching method, and an upper structure (notshown) and a contact hole are formed on the upper electrode 15.Therefore, it is possible to manufacture the memory device shown in FIG.15.

According to the configuration of the memory device of theabove-described embodiment, the diffusion preventing barrier layer 19 isformed as an insulation layer isolating each memory cell. Therefore, itis possible to suppress or prevent the diffusion of an element such asCu contained in the memory layer 13 or the ion source layer 14, whichhas a high diffusion coefficient.

Therefore, according to the configuration of the memory device of thisembodiment, it is possible to suppress the variation in characteristicsof the memory device such as a write-in voltage, a read-out voltage, andthe resistance to repetition for each memory cell.

In addition, since it is possible to suppress the deterioration of thecharacteristics caused by the diffusion of the element into the outsideof the memory cell, the characteristic of the resistance to repetitioncan be improved.

In addition, since it is possible to decrease the margin of a write-involtage and a read-out voltage for reliably performing the write-inoperation and read-out operation by suppressing the variation of thecharacteristics for each memory cell, it is possible to allow a write-involtage and a read-out voltage to be lowered.

In addition, the variation of characteristics for each memory cell issuppressed, such that it is possible to reliably perform the write-inand the read-out operation and thereby it is possible to stably operatethe memory device.

Therefore, even when the device is made to be miniaturized, it ispossible to realize a memory device that can stably operate.

In the memory device according to the embodiment of the invention, it ispreferable that each memory cell electrically connects to a transistorselecting each memory cell on a one-to-one basis.

In addition, in the embodiment of the invention, a structure configuredby laminating each layer of the lower electrode, the memory layer, theion source layer, and the upper electrode is not limited to thestructures shown in FIGS. 1 and 2 and the above-described embodiments,and other structures may be adopted.

For example, in the above-described embodiments, the ion source layer 14is laminated on the memory layer 13. The invention includes aconfiguration where the memory layer is laminated on the ion sourcelayer, and the ion source layer and the memory layer are isolated foreach memory cell.

The invention is not limited to the above-described embodiments andvarious configurations may be made without departing from the scope ofthe invention.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Application JP 2010-079695 filedin the Japan Patent Office on Mar. 30, 2010, the entire contents ofwhich is hereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A method of manufacturing a memory devicecomprising the steps of: forming an insulation layer on a lowerelectrode layer and opening a hole in the insulation layer reaching thelower electrode layer: forming, on top surfaces of the insulation layerand surfaces of the hole, a nitride film or an oxide film of a metalelement selected from Ti, Ta, Ru, Mn, Al, Co, or W, or an alloy of anyof these metal elements, and which is thinner than a depth of the hole;removing the nitride film or oxide film in a lower portion of the holeand exposing the lower electrode layer via the hole while leaving someof the nitride film or oxide film at least on sidewalls of the hole:forming a first film that comes into contact with the lower electrodelayer and with the nitride film or the oxide film and that is thinnerthan the depth of the hole; forming, on the first film, a second filmpart of which is buried in the hole and which contains at least anelement selected from Cu, Ag, Zn, Al, or-and-Zr, and at least oneelement selected from Te, S, or-and-Se; planarizing a surface to removeportions of the nitride film or oxide film, the first film, and thesecond film, which are located on the insulation layer, with remainderportions of the nitride film or oxide film, the first film, and thesecond film in the hole being made to remain and forming a diffusionpreventing barrier film that is made from the remainder portion of thenitride film or oxide film, a memory layer made from the remainderportion of the first film, and an ion source layer made from theremainder of the second film, and forming an upper electrode layer onthe ion source layer.